Semiconductor device and method for manufacturing the same

ABSTRACT

An object is to realize a hermetically sealed package which ensures long-term airtightness inside the package by sealing using a substrate, or a sealing structure for reducing destruction caused by pressure from the outside. A frame of a semiconductor material is provided over a first substrate, which is bonded to a second substrate having a semiconductor element so that the semiconductor element is located inside the frame between the first substrate and the second substrate. The frame may be formed using, as frame members, two L-shaped semiconductor members in combination or four or more stick semiconductor members in combination.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device having a circuitincluding thin film transistors (hereinafter referred to as TFTs) and amanufacturing method of the semiconductor device. For example, thepresent invention relates to an electro-optical device typified by aliquid crystal display panel, a light-emitting display device havingorganic light-emitting elements, a plasma display device, and anelectronic device having an optical module or a wireless chip as acomponent.

Note that “semiconductor device” used in this specification refers todevices in general that can operate by utilizing semiconductorcharacteristics, and an electro-optical device, a semiconductor circuit,and an electronic device are all included in the semiconductor device.

2. Description of the Related Art

In recent years, much attention has been given to a technique forforming thin film transistors (TFTs) using a semiconductor thin film(with a thickness of approximately several to several hundrednanometers) which is formed over a substrate having an insulatingsurface. Thin film transistors have been widely applied to electronicdevices such as ICs and electro-optical devices, and their developmentespecially as switching elements for an image display device has beenaccelerated.

As image display devices, liquid crystal display devices have beenknown. Active-matrix liquid crystal display devices have been commonlyused because they can provide images with higher definition thanpassive-matrix liquid crystal display devices. In an active-matrixliquid crystal display device, display patterns are formed on a screenby driving of pixel electrodes that are arranged in a matrix.Specifically, voltage is applied between a selected pixel electrode anda counter electrode corresponding to the pixel electrode, and thus, aliquid crystal layer located between the pixel electrode and the counterelectrode is optically modulated. This optical modulation is recognizedas a display pattern by a viewer.

The present applicant has proposed liquid crystal dropping in Reference1 (U.S. Pat. No. 4,691,995).

In recent years, light-emitting devices having EL elements as selflight-emitting elements have been researched actively, and inparticular, light-emitting devices using an organic material as an ELmaterial have attracted attention. These light-emitting devices are alsocalled EL displays.

A phenomenon in which light emission occurs when an electric field isapplied to a substance is referred to as an electroluminescence (EL)phenomenon, which is a known phenomenon. In particular, inorganic ELusing an inorganic thin film of ZnS:Mn and organic EL using an organicthin film formed by evaporation are bright, exhibit EL emission withhigh efficiency, and are attempted to be applied to displays.

The luminescence of an organic compound includes light emission(fluorescence) upon returning to a ground state from a singlet-excitedstate and light emission (phosphorescence) upon returning to a groundstate from a triplet-excited state. Light-emitting devices manufacturedusing a film formation apparatus and a film formation method of thepresent invention can be applied to cases where they perform eitherlight emission.

Light-emitting devices are of a self light-emitting type, unlike liquidcrystal display devices; therefore, a feature of the light-emittingdevices is that they have no problem with viewing angle. That is,light-emitting devices are more suitable displays for outdoor use manliquid crystal displays, and a variety of applications have beenproposed.

In addition, light-emitting elements each including a cathode, an ELlayer, and an anode are called EL elements, which include two types: oneis that in which an EL layer is formed between two kinds of stripeelectrodes that are arranged at right angles to each other(simple-matrix type), and the other is that in which TFTs are providedand an EL layer is formed between pixel electrodes and counterelectrodes that are arranged in a matrix (active-matrix type). However,when pixel density is increased, it is thought that the active-matrixtype where each pixel (or each dot) is provided with a switch beadvantageous because the active-matrix type can be driven at lowervoltage.

An EL material forming an EL layer deteriorates very easily anddeteriorates by easily oxidizing or absorbing moisture under thepresence of oxygen or water. Therefore, there are problems in that theluminance of light emission and the lifetime of a light-emitting elementdecrease. Thus, by covering of a light-emitting element with a sealingcan, enclosure of dry air inside the sealing can, and attachment of adrying agent, oxygen or moisture is prevented from reaching thelight-emitting element.

The present applicant has also proposed, in Reference 2 (U.S. Pat. No.6,724,150), that a light-emitting device is provided with a drying agentin a depression in a sealing substrate.

In addition, the present applicant has proposed, in Reference 3 (U.S.Pat. No. 6,876,145), that a semiconductor substrate is used for alight-emitting device.

SUMMARY OF THE INVENTION

In a conventional sealing technique, a sealant that is an organicmaterial is used to bond a pair of substrates. Materials of sealants aredeveloped for a variety of applications; for example, a sealant for aliquid crystal injection method, a sealant for a liquid crystal droppingmethod, a sealant for organic EL, and the like are used for respectivedisplay panels. Each of the sealants is an organic material.

Furthermore, in recent years, long-term reliability and durability ofsemiconductor devices have been demanded, which may be constrained byreliability and durability of a sealant that is an organic material.

There is a technique by which sealing is performed using a high-strengthceramic substrate, but processing of a ceramic substrate, such ascutting or thinning, is difficult and accordingly it is difficult toobtain a desired shape, for example, a dimension or a thickness. Inaddition, a ceramic substrate does not transmit light; therefore, itcannot be used for sealing of a light-receiving sensor, a liquid crystaldisplay device, a plasma display device, or the like. Moreover, becauseof its high heat resistance, if a ceramic substrate with low thermalexpansion coefficient is bonded with an adhesive to a glass substrate orthe like where elements are formed, there is possibility that theadhesion between the substrates may be decreased due to a largedifference in thermal expansion coefficient.

It is an object of the present invention to realize a hermeticallysealed package which ensures long-term airtightness inside the packageby sealing using a substrate, but not a ceramic substrate. It is anotherobject of the present invention to realize a sealing structure forreducing destruction caused by pressure from the outside.

It is still another object to provide a sealing structure for preventingthe intrusion of an impurity such as moisture. It is yet another objectto provide a structure for improving the reliability of a wireless chipagainst pressure from the outside. It is still yet another object toprovide a structure of a wireless chip that is resistant to bending.

The present invention is intended to achieve the aforementioned objectsthrough a reduction in usage of, or preferably elimination of the useof, a sealant that is an organic material in a hermetically sealedpackage.

In a hermetically sealed package, a first substrate is provided with aframe of a semiconductor material, which is bonded to a second substratethat has a semiconductor element, whereby the first substrate and thesecond substrate are bonded together so that the semiconductor elementis located inside the frame to ensure airtightness inside the frame.

The first substrate may be provided with the frame of a semiconductormaterial by a separation method by hydrogen ion irradiation (a hydrogenion implantation separation method) or the like, but the presentinvention is not particularly limited thereto. The separation method byhydrogen ion irradiation refers to a method in which a semiconductorsubstrate is irradiated with hydrogen ions to form a hydrogen-containinglayer, which serves as a separation layer, in the semiconductorsubstrate and is then fixed to another substrate, and heat treatment orthe like is lastly performed to separate one part of the semiconductorsubstrate from the other within the hydrogen-containing layer or at theinterface thereof and to form a single-crystal semiconductor layer overthe fixed substrate. In the separation method by hydrogen ionirradiation, the thickness of a single-crystal semiconductor layer to beobtained is determined by the position of a hydrogen-containing layerformed in a semiconductor substrate. Thus, the separation method byhydrogen ion irradiation is suitable for cases where a frame thatmaintains the distance between a pair of substrates, that is, asingle-crystal semiconductor layer is formed to be thin. The frame isformed using a single-crystal semiconductor substrate or apolycrystalline semiconductor substrate. As a single-crystalsemiconductor substrate, a semiconductor wafer of silicon, germanium, orthe like, a compound semiconductor wafer of gallium arsenide, indiumphosphide, or the like, or the like can be used. The semiconductorsubstrate has a thickness of about 0.5 mm to 1.5 mm. Depending on thedistance between the substrates, the semiconductor substrate may bethinned by grinding to less than 0.5 mm. Although the frame may beformed by being cut out from the semiconductor substrate, it ispreferable that a semiconductor substrate and a first substrate bebonded together and one part of the semiconductor substrate be separatedfrom the other by a separation method by hydrogen ion irradiation, and asingle-crystal semiconductor layer over the first substrate which isobtained by the separation be patterned. When cleaned surfaces arelocated in contact with each other, a bond is formed by attractionbetween the surfaces; therefore, a bond can be formed at roomtemperature. In order to increase bonding strength, it is preferablethat a bonding layer which has a smooth surface and forms a hydrophilicsurface be provided in a portion where bonding is intended. In order toobtain a smooth surface, a planarization process may be performed withan apparatus using chemical mechanical polishing (hereinafter referredto as CMP) or the like. It is preferable that a bonding layer of thefirst substrate and a bonding layer of the second substrate be locatedin contact with each other and bonded together at room temperature.

In order to further increase adhesion strength of the bonding, heattreatment may be performed. In the case where treatment for making asurface hydrophilic is performed to form a bonding layer, hydroxylgroups on the surfaces act to form a bond by hydrogen bonding. If thecleaned surfaces mat are located in contact with each other and bondedtogether are heated at room temperature or higher, bonding strength canfurther be increased. When a glass substrate is used as the firstsubstrate that has a light-transmitting property, the heating forincreasing bonding strength is performed at a temperature lower than thestrain point of the substrate. In addition, heating may be performedusing a halogen lamp or the like, or partial heating may be performed byscanning with laser light.

One aspect of the present invention disclosed in this specification is asemiconductor device which includes a first substrate, a secondsubstrate, a semiconductor element over the first substrate, and asemiconductor member between the first substrate and the secondsubstrate. The semiconductor element is sealed using the firstsubstrate, the second substrate, and the semiconductor member, and thedistance between the first substrate and the second substrate ismaintained by the semiconductor member.

According to the above aspect, the semiconductor device further includesa first bonding layer of an inorganic insulating material between thesemiconductor member and the first substrate. With the use of the firstbonding layer of an inorganic insulating material, the semiconductormember and the first substrate can be firmly fixed to each other even ifan adhesive material such as a sealant is not used. In addition, thesemiconductor device includes a second bonding layer of an inorganicinsulating material between the semiconductor member and the secondsubstrate. With the use of the second bonding layer of an inorganicinsulating material, the semiconductor member and the second substratecan be firmly fixed to each other even if an adhesive material such as asealant is not used. The semiconductor member and at least one of thefirst substrate and the second substrate are bonded together.

In addition, according to the above aspect, the semiconductor member hasa frame shape, and the semiconductor element is sealed in a spacesurrounded by the semiconductor member, the first substrate, and thesecond substrate. The semiconductor member having a frame shape alsofunctions as a spacer for maintaining the distance between the firstsubstrate and the second substrate.

The frame is preferably formed from a single semiconductor substrateinto a loop, in that sealing is possible without use of any sealant.However, the frame may be formed using, as frame members, two L-shapedsemiconductor members in combination or four or more stick semiconductormembers in combination. When a plurality of semiconductor members isused as the frame, a sealant is used in a connecting portion between theframe members. Even if a sealant is partly used in a connecting portionbetween the frame members, a portion where a sealant is used issignificantly smaller than before. Therefore, it is possible to furtherprevent the intrusion of an impurity such as moisture and to furtherimprove reliability compared to a conventional sealing structure.

Another aspect of tire present invention is a semiconductor device whichincludes a first substrate, a second substrate, a semiconductor elementover the first substrate, and a plurality of semiconductor membersbetween the first substrate and the second substrate. The semiconductorelement is sealed using the first substrate, the second substrate, andthe plurality of semiconductor members, and the distance between thefirst substrate and the second substrate is maintained by the pluralityof semiconductor members.

According to the above aspect, each of the plurality of semiconductormembers has a stick shape or an L shape, and the semiconductor elementis sealed in a space surrounded by the plurality of semiconductormembers, the first substrate, and the second substrate. A wireless chip,an optical sensor, or the like does not necessarily need to behermetically sealed except when an organic material is used, such as foran organic memory or the like in a wireless chip. In a semiconductorelement such as a wireless chip or an optical sensor, a space between apair of substrates does not necessarily need to be a hermetic space, andthe plurality of semiconductor members is made to function as a spacerfor maintaining the distance between the pair of substrates. In thepresent invention, in order to protect a semiconductor element such as awireless chip or an optical sensor from impact or the like from theoutside, the semiconductor element such as a wireless chip or an opticalsensor is placed between a pair of substrates.

Another aspect of the present invention is a semiconductor device whichincludes a first substrate, a second substrate, a semiconductor circuitover the first substrate, and a plurality of semiconductor membersbetween the first substrate and the second substrate. The plurality ofsemiconductor members is placed around the semiconductor circuit.

According to the above aspect, if an antenna that is electricallyconnected to the semiconductor circuit is provided over the firstsubstrate, the semiconductor circuit can communicate using wirelesssignals. A portion where the antenna and the semiconductor circuit areelectrically connected to each other is sensitive to pressure or thelike from the outside, and the connection may be destroyed byapplication of some force. The connection can withstand impact from theoutside if the antenna is protected by the first substrate and thesecond substrate. Even if a fragile material such as glass is used forthe first substrate or tire second substrate, the plurality ofsemiconductor members can distribute pressure that is applied to one oftire substrates; thus, overall strength can be increased compared to thecase where a semiconductor circuit and an antenna are formed over asingle substrate so as to be exposed without the use of a pair ofsubstrates. When a flexible material such as a resin is used for thefirst substrate or the second substrate, by placement of the pluralityof semiconductor members around the semiconductor circuit, bending ofthe substrate can be partially suppressed, and in particular, theconnecting portion between the antenna and the semiconductor circuit canbe protected. Because each semiconductor member is hard to bend, itfunctions as a skeletal member (reinforcing member). Tire distancebetween the first substrate and the second substrate is maintained bythe semiconductor members.

According to each of the above aspects, the semiconductor device furtherincludes a first bonding layer of an inorganic insulating materialbetween the semiconductor member and the first substrate. In addition,the semiconductor device includes a second bonding layer of an inorganicinsulating material between the semiconductor member and the secondsubstrate. With the use of the bonding layer of an inorganic insulatingmaterial, bonding to the substrate is achieved with a simple structure.This simple structure is a structure in which at least the first bondinglayer, the semiconductor member, the second bonding layer, and thesecond substrate are stacked in this order over the first substrate.

When an active-matrix display device using a semiconductor element in apixel portion is manufactured, one aspect, of the present invention forachieving the above aspects is a method for manufacturing asemiconductor device, in which one surface of a semiconductor member isbonded to a first substrate that has a light-transmitting property, apixel portion including a semiconductor element is formed over a secondsubstrate, the other surface of the semiconductor member is bonded tothe second substrate to seal the pixel portion in a space surrounded bythe semiconductor member, the first substrate, and the second substrate.

According to the manufacturing method of the above aspect, the pixelportion and the semiconductor member are placed so as not to overlapwith each other, and the semiconductor member is placed around the pixelportion.

According to each of the above aspects, the semiconductor member is asingle-crystal semiconductor member, preferably, a single-crystalsilicon member. In the semiconductor element, a semiconductor layerwhich serves as an active layer is used, and one of causes fordeterioration of the semiconductor element is considered to be theintrusion of an impurity from the outside (particularly, an alkali metalsuch as Na or K). By placement of a single-crystal semiconductor memberaround the semiconductor element, an impurity from the outside is madeto intrude preferentially into tire single-crystal semiconductor memberand to be retained in the single-crystal semiconductor member;accordingly, the intrusion of an impurity into the semiconductor layerof the semiconductor element is prevented. By prevention of theintrusion of an impurity into the semiconductor layer of thesemiconductor element, the long-term reliability of the semiconductordevice is improved. In addition, a material of the single-crystalsemiconductor member placed around the semiconductor element can be of alower grade than that of the semiconductor layer used for thesemiconductor element: thus, tire semiconductor member can bemanufactured at low cost.

The present invention can also be used for a package of a plasma displaydevice.

The present invention can be used for not only display devices but alsoa variety of hermetically sealed packages. For example, the presentinvention may be used for hermetic sealing of an infrared remote controlreceiver module or for a sealing shield of a high-frequencysemiconductor element such as a SAW filter.

Because the present invention can achieve highly hermetic packaging withthe use of a glass substrate as a sealing substrate, the presentinvention is most suitable for a semiconductor module in which light istransmitted through a sealing substrate. When a glass substrate is used,a glass substrate can be processed more easily than a ceramic substrate.Therefore, an unnecessary portion can be cut off after a sealingsubstrate is attached, which leads to a reduction in the size of amodule. In addition, the semiconductor member can be made to function asa spacer for maintaining the distance between the first substrate andthe second substrate; thus, the semiconductor circuit can be protected.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are perspective views and FIG. 1D is a cross-sectionalview showing a manufacturing process of a semiconductor device.

FIGS. 2A to 2E are cross-sectional views showing a manufacturing processof a semiconductor device.

FIGS. 3A and 3B are a cross-sectional view of a liquid crystal displaydevice and a top view thereof, respectively.

FIGS. 4A and 4B are a cross-sectional view of a semiconductor devicehaving a light-receiving portion and atop view thereof, respectively.

FIGS. 5A and 5B are a cross-sectional view of a semiconductor device anda top view thereof, respectively.

FIG. 6 is atop view of a semiconductor device.

FIGS. 7A to 7C are diagrams showing examples of electronic devices.

FIGS. 8A and 8B are a top view of a semiconductor device and across-sectional view thereof, respectively.

DETAILED DESCRIPTION OF THE INVENTION

Embodiment modes of the present invention will be described below.

Embodiment Mode 1

First, a single-crystal silicon substrate 110 is prepared (FIG. 1A).Note that not only a single-crystal silicon substrate but also asingle-crystal silicon germanium substrate or the like may be used. Thesingle-crystal silicon substrate 110 has, for example, a disk shape of120 mm to 300 mm in diameter.

Next, a member to be a frame is taken out of the single-crystal siliconsubstrate 110, and a first substrate 111 having a light-transmittingproperty is provided with a frame 114 of a semiconductor material (FIG.1B). The first substrate having a light-transmitting property may beprovided with the frame of a semiconductor material by a separationmethod by hydrogen ion irradiation or the like, but the presentinvention is not particularly limited thereto. The frame is formed usinga single-crystal semiconductor substrate or a polycrystallinesemiconductor substrate. The frame may be formed by being cut out from asemiconductor substrate, but the frame is preferably formed by aseparation method by hydrogen ion irradiation.

FIGS. 2A to 2E show an example in which the frame is formed using aseparation method by hydrogen ion irradiation.

A first nitrogen-containing silicon oxide film (hereinafter referred toas a first SiON film) 131 a is formed over fire single-crystal siliconsubstrate 110 (FIG. 2A). The thickness may be appropriately determinedby a practitioner and may be set to be 10 nm to 500 nm (preferably, 20nm to 50 nm). The first SiON film 131 a serves as a member of the framelater. Note that the first SiON film 131 a can be formed by a methodlike a CVD method such as a plasma CVD method or a low pressure CVDmethod, a sputtering method, or the like. Note that the first SiON film131 a can be formed on the single-crystal silicon substrate 110 bytreatment of the surface of the single-crystal silicon substrate withoxygen radicals (which may include OH radicals) that are generated byplasma discharge in an oxygen-containing gas atmosphere and by treatmentof the surface of the single-crystal silicon substrate with nitrogenradicals (which may include NH radicals) that are generated by plasmadischarge in a nitrogen-containing atmosphere. Accordingly, the bondingstrength of the single-crystal silicon substrate 110 in being bonded toa sealing substrate later can be increased.

Note that the first SiON film 131 a does not necessarily need to beprovided, and a single-crystal silicon substrate in which ahydrogen-containing layer is formed by introduction of hydrogen may beused. Instead of the SiON film, a silicon oxide film may be formed by achemical vapor deposition (CVD) method or a plasma chemical vapordeposition (plasma CVD) method using a mixed gas of a TEOS gas and anoxygen gas. Alternatively, a substrate may be used in which an SiON filmand an oxygen-containing silicon nitride film (hereinafter referred toas an SiNO film) are sequentially stacked over a single-crystal siliconsubstrate, a hydrogen-containing layer is formed in the single-crystalsilicon substrate by partial introduction of hydrogen, and a siliconoxide film is then formed over the SiNO film by a CVD method or a plasmaCVD method using a mixed gas of a TEOS gas and an oxygen gas. Stillalternatively, an SiON film, an SiNO film, and a silicon oxide filmformed by a CVD method or a plasma CVD method using a mixed gas of aTEOS gas and an oxygen gas may be sequentially stacked over asingle-crystal silicon substrate, and a hydrogen-containing layer may beformed in the single-crystal silicon substrate by partial introductionof hydrogen. Note that, when a silicon oxide film is formed by a CVDmethod or a plasma CVD method using a mixed gas of a TEOS gas and anoxygen gas, the thickness of the silicon oxide film is preferably in therange of 40 nm to 800 nm.

Note that a TEOS gas here refers to a tetraethyiorthosilicate gas. Ifthe silicon oxide film formed by a CVD method or a plasma CVD methodusing a mixed gas of a TEOS gas and an oxygen gas is provided at thebonding interface between the single-crystal silicon substrate and asealing substrate, adhesion between the substrates can be increased.

Note that, when the first SiON film 131 a is not formed over thesingle-crystal silicon substrate, a natural oxide film, a chemicaloxide, or an ultrathin oxide film which is formed by UV lightirradiation in an oxygen-containing atmosphere is preferably formed onthe surface of the single-crystal silicon substrate. Here, a chemicaloxide can be formed by treatment of the surface of the single-crystalsilicon substrate with an oxidizing agent such as ozone water, hydrogenperoxide water, or sulfuric acid. If an oxide film is formed over thesingle-crystal silicon substrate, the surface of the single-crystalsilicon substrate can be prevented from being etched in introducinghydrogen later.

Next, hydrogen is introduced into the single-crystal silicon substrate110 from the first SiON film 131 a side through the first SiON film 131a to form a hydrogen-containing layer 140 (FIG. 2B). Alternatively, thehydrogen-containing layer 140 may be formed by introduction of hydrogeninto the single-crystal silicon substrate 110 from a side opposite toarrows shown in FIG. 2B. Note that the depth at which thehydrogen-containing layer 140 is formed (the distance between thehydrogen-containing layer 140 and the interface between thesingle-crystal silicon substrate 110 and the first SiON film 131 a)corresponds to the thickness of a single-crystal silicon layer whichfunctions as a part of a spacer for maintaining the distance betweensubstrates later.

For example, irradiation with hydrogen ions can be performed by an ionimplantation method using a mass-separation ion implantation apparatusat a dose of 1×10¹⁶ atoms/cm² to 1×10¹⁷ atoms/cm² so that asingle-crystal silicon layer with a thickness of 100 nm is leftremaining between the surface of tire single-crystal silicon substrate110 and the hydrogen-containing layer 140. Alternatively, irradiationwith hydrogen ions may be preformed using a non-mass-separation iondoping apparatus with H₃ ⁺ ions used as a main ion species. When an iondoping apparatus is used, by use of H₃ ⁺ as hydrogen ions, the length oftime it takes to perform irradiation can be decreased.

Note that, in this embodiment mode, a process for planarizing thesurface of the first SiON film 131 a may be performed. For example, thesurface of the SiON film can be planarized by a polishing process calledchemical mechanical polishing (CMP). By planarization of the surface ofthe SiON film, the adhesion thereof to a sealing substrate to be bondedlater can be increased.

Next, the first SiON film 131 a formed over the single-crystal siliconsubstrate 110 is irradiated with an argon ion beam in a vacuum to placeatoms on the surface in an active state where chemical bond is easilyformed. Here, the first SiON film 131 a can be placed in an active stateby collision of argon ions, which are generated by plasma discharge inan argon gas atmosphere, with the surface of the first SiON film 131 a.Note that the surface can be placed in an active state by exposure tonot only an argon ion beam but also a plasma atmosphere, X-rays, or anelectron beam. A gas used for exposure to a plasma atmosphere can beoxygen, nitrogen, hydrogen, an inert gas such as argon or helium, amolecular gas such as ammonia, or the like. Note that the energy forirradiation of the substrate at that time is preferably controlled to bea DC bias of from approximately several volts to 400 volts. Stillalternatively, the surface may be placed in an active state by exposureto an atmosphere of ions with an energy equal to or higher than 20 eVand lower than 200 eV.

Next, the single-crystal silicon substrate 110 and a first substrate 111having a light-transmitting property, which is separately prepared andserves as a sealing substrate, are bonded together. In this embodimentmode, a glass substrate is used as the first substrate, on tire surfaceof which a first oxygen-containing silicon nitride (SiNO) film 112 and asecond nitrogen-containing silicon oxide (SiON) film 131 b aresequentially formed (FIG. 2C). Note that, in a similar manner to thesurface of the single-crystal silicon substrate, the surface of thesecond SiON film 131 b may be activated. Note that the first SiNO film112 or the second SiON film 131 b does not necessarily need to beprovided on the first substrate 111. Alternatively, a glass substrateover which a silicon oxide film is formed by a CVD method or a plasmaCVD method using a mixed gas of a TEOS gas and an oxygen gas may beused. Still alternatively, a glass substrate on the surface of which noinsulating layer is formed may be used. In that case, it is preferablethat the surface of the glass substrate be cleaned.

In this embodiment mode, a chemical bond is formed at the interfacebetween the first SiON film 131 a and the second SiON film 131 b bycontact of the surfaces thereof with each other and by bonding thereof;thus, a third SiON film 131 where the first SiON film 131 a and thesecond SiON film 131 b are bonded together is formed.

In this embodiment mode, by irradiation of the substrate surface with anargon ion beam or the like in a vacuum, an adsorption gas, a naturaloxide film, or the like which is present on the substrate surface can beetched; a bonding force for the bonding can be given to the substratesurface; and two substrates can be bonded together by superpositionthereof on each other. An interatomic bond is formed at the interfacebetween the substrates that are bonded together as described above, anda firm bond can be formed without any heat treatment.

Note that, instead of the glass substrate, a plastic substrate which canwithstand a temperature for heat treatment in a later process may beused, or a film-like flexible substrate may be used. As a plasticsubstrate, a substrate formed of polyamide such as polyethyleneterephthalate (PET), polyethylene naphthalate (PEN), polyether sulfone(PES), nylon 6, or nylon 66 may be used, and as a flexible substrate, asynthetic resin such as acrylic can be used. As the other substrate, anadhesive synthetic film of polyolefin such as PE or PP, an acrylicsynthetic resin, an epoxy synthetic resin, or the like may be used. Anadhesive synthetic film can be fixed by heat pressure bonding.Alternatively, a resin substrate containing an inorganic material, forexample, an HT substrate (manufactured by Nippon Steel Chemical Co.,Ltd.) with a Tg of 400° C. or higher may be used. Still alternatively, ahighly heat-resistant substrate such as a quartz substrate or acrystallized glass substrate may be used. Note that, because a ceramicsubstrate has low surface planarity, it cannot be bonded to thesingle-crystal silicon substrate later and cannot be used in place ofthe glass substrate.

Note that the first SiNO film 112 and the second SiON film 131 b whichare formed over the first substrate 111 each function as a blockinglayer and can prevent the diffusion of an impurity from the glasssubstrate. It is particularly effective to provide a blocking layerbecause the glass substrate contains ions that tend to move. Note thatthe first SiNO film 112 and the second SiON film 131 b can be formed bya method like a CVD method such as a plasma CVD method or a low-pressureCVD method, a sputtering method, or the like.

Here, it is preferable that a process for planarizing the surface of thesecond SiON film 131 b be performed. For example, the surface of theSiON film can be planarized by a polishing process called chemicalmechanical polishing (CMP). By planarization of the surface of the SiONfilm, the adhesion thereof to the single-crystal silicon substrate 110to be bonded later can be increased.

Next, heat treatment (first heat treatment) at 400° C. to 600° C. isperformed. This heat treatment causes a change in the volume ofmicrovoids in the hydrogen-containing layer 140 and generates a boundarysurface along the hydrogen-containing layer 140. Accordingly, thesingle-crystal silicon substrate 110 is divided, and by removal of asingle-crystal silicon substrate 190 obtained by the division, the firstSiNO film 112, the third SiON film 131, and a single-crystal siliconlayer 113 are left remaining over the first substrate 111 (FIG. 2D).

Next, a process for planarizing the surface of the single-crystalsilicon layer 113 may be performed. The planarization process can beperformed by a polishing process called chemical mechanical polishing(CMP).

Next, selective etching is performed using a photolithography techniqueor tire like to form the frame 114 of a semiconductor material. At thetime of this etching, the first SiNO film 112 functions as a protectivefilm for the first substrate 111.

Through the above-described steps, the frame of this embodiment mode canbe formed over the glass substrate (FIG. 2E). FIG. 2E corresponds to across section taken along a dotted line X-Y of FIG. 1B. In thisembodiment mode, a bonding force for the bonding is given to thesubstrate surface and then the substrates are superposed on each other;thus, strong bonding can be performed without any high-temperature heattreatment being performed. Therefore, there is no need to use anexpensive, highly heat-resistant substrate, and an inexpensive glasssubstrate, plastic substrate, or the like can be used; thus,manufacturing cost can be reduced. In addition, a flexible substratewhich cannot withstand high-temperature treatment can also be used, andthe range of choice for the sealing substrate can be expanded.

Although an example in which an SiON film and an SiNO film are stackedbetween a glass substrate and a single-crystal silicon layer isdescribed in this embodiment mode, the present invention is not limitedthereto. A single-layer structure using any one of a silicon oxide film(also called an SiO₂ film), a silicon nitride film (also called an SiNfilm), an SiON film, and an SiNO film may be employed or a structure inwhich a plurality of these films is stacked appropriately may beemployed. Note that, in this specification, an SiON film means a filmthat contains more oxygen than nitrogen and can also be referred to as anitrogen-containing silicon oxide film. In addition, in thisspecification, an SiNO film means a film that contains more nitrogenthan oxygen and can also be referred to as an oxygen-containing siliconnitride film. For example, an SiON film may be formed over asingle-crystal silicon substrate; an SiNO film may be formed over aglass substrate; and the single-crystal silicon substrate and the glasssubstrate may be bonded together with the SiON film and the SiNO filminterposed therebetween. Alternatively, an SiNO film and an SiON filmmay be formed over a glass substrate in this order, and a single-crystalsilicon substrate and the glass substrate may be bonded together withthe SiON film and the SiNO film interposed therebetween. Stillalternatively, an SiON film and an SiNO film may be formed over asingle-crystal silicon substrate in this order, and the single-crystalsilicon substrate and a glass substrate may be bonded together with theSiON film and the SiNO film interposed therebetween. Yet alternatively,an SiON film may be formed over a single-crystal silicon substrate; anSiNO film and an SiON film may be formed over a glass substrate in thisorder; and the single-crystal silicon substrate and the glass substratemay be bonded together by bonding of the SiON films to each other, or asilicon oxide film may be formed between the SiON film and the SiNO filmby a CVD method or a plasma CVD method using a mixed gas of a TEOS gasand an oxygen gas.

Note that it is preferable that a silicon oxide film formed by a CVDmethod or a plasma CVD method using a mixed gas of a TEOS gas and anoxygen gas be provided at a bonding interface between a single-crystalsilicon substrate and a glass substrate. For example, after aninsulating layer of SiNO or the like is provided over a single-crystalsilicon substrate, a silicon oxide film may be formed by a CVD method ora plasma CVD method using a mixed gas of a TEOS gas and an oxygen gas,and the silicon oxide film formed by a CVD method or a plasma CVD methodusing a mixed gas of a TEOS gas and an oxygen gas and a glass substratemay be bonded together. Alternatively, after an insulating layer of SiONor the like is provided over a glass substrate, a silicon oxide film maybe formed by a CVD method or a plasma CVD method using a mixed gas of aTEOS gas and an oxygen gas, and the silicon oxide film formed by a CVDmethod or a plasma CVD method using a mixed gas of a TEOS gas and anoxygen gas and a single-crystal silicon substrate may be bondedtogether. By provision of a silicon oxide film formed by a CVD method ora plasma CVD method using a mixed gas of a TEOS gas and an oxygen gas ata bonding interface, adhesion can further be increased. Note that,instead of a silicon oxide film formed by a CVD method or a plasma CVDmethod using a mixed gas of a TEOS gas and an oxygen gas, a siliconoxide film formed by a sputtering method or the like may be used.

Next, as shown in FIG. 1C and FIG. 1D, the first substrate 111 providedwith the frame 114 and a second substrate 101 provided with a pixelportion 122 are bonded together. If necessary, heat treatment forforming a further stronger bond is performed at a temperature lower thanthe strain point of the first substrate 111. As the second substrate101, a glass substrate that has a thermal expansion coefficient equal tothat of the first substrate 111 is used. For the frame 114, asemiconductor substrate that has a small difference in thermal expansioncoefficient with respect to the first substrate 111 is used. In thisembodiment mode, the frame 114 and the second substrate 101 are bondedtogether; therefore, a silicon oxide film 132 is formed between theframe 114 and the second substrate 101 by a CVD method or a plasma CVDmethod using a mixed gas of a TEOS gas and an oxygen gas.

FIG. 1D shows an example of a cross-sectional view of a portionsurrounded by a chain line of FIG. 1C. The second substrate 101 isprovided with a thin film transistor 120 and a light-emitting element127 which is electrically connected to the thin film transistor 120.Note that the light-emitting element 127 has at least a first electrode123, a light-emitting layer 124, and a second electrode 125. In thepixel portion 122, a plurality of light-emitting elements 127 isarranged in a matrix, and an insulating layer 121 is provided betweeneach adjacent first electrode 123. Between a semiconductor layer of thethin film transistor 120 and the second substrate 101, a second SiNOfilm 102 is provided as a blocking film for preventing impuritydiffusion from the second substrate 101 that is a glass substrate. Inaddition, a gate insulating film is provided over the semiconductorlayer of the thin film transistor 120, and as this gate insulating film,the silicon oxide film 132 formed by a CVD method or a plasma CVD methodusing a mixed gas of a TEOS gas and an oxygen gas is used.

In this embodiment mode, a strong bond is formed by contact of the frame114 and the silicon oxide film 132 with each other. A method for bondingthe first substrate provided with frame 114 and the second substrate 101provided with the pixel portion 122 to each other is not limited to thatin which these substrates are bonded together at the interface betweenthe frame 114 and the silicon oxide film 132. A silicon oxide film maybe formed over the frame 114 by a CVD method or a plasma CVD methodusing a mixed gas of a TEOS gas and an oxygen gas and may be bonded tothe silicon oxide film 132. Although FIG. 1D shows an example in whichthe second SiNO film 102 and the silicon oxide film 132 are stacked overthe second substrate 101, the present invention is not limited thereto.A single-layer structure using any one of a silicon oxide film (alsoreferred to as an SiO₂ film), a silicon nitride film (also referred toas an SiN film), an SiON film, and an SiNO film or a structure in whichany of the above films are stacked as appropriate may be used.

A closed space 126 surrounded by the first substrate 111, the secondsubstrate 101, and the frame 114 may be filled with an inert gas, may bea low-pressure space, or may be filled with, a material liquid such as asilicone resin or the like.

Note that tire distance between the pair of substrates is adjusteddepending on the sum of the thickness of the second SiNO film 102, thesilicon oxide film 132, the frame 114, the third SiON film 131, and thefirst SiNO film 112. Tire frame 114 is formed of single-crystal silicon,and the entire portion where the pair of substrates are fixed is formedof an inorganic material. Therefore, a hermetically sealed package whichensures long-term airtightness can be realized.

In particular, when a layer containing an organic compound, for example,a triplet compound is used as the light-emitting layer of the lightemitting element, die intrusion of moisture or oxygen can also beprevented, and a light-emitting panel having improved long-termreliability can be provided. In addition, a long-lifetime light-emittingpanel can also be provided when a layer containing an inorganiccompound, for example, an inorganic thin film of ZnS:Mn is used as thelight-emitting layer of the light-emitting element.

Although an example of an active-matrix light-emitting device isdescribed in this embodiment mode, the present invention is not limitedthereto and can be applied to a sealing structure for a passive-matrixlight-emitting device.

Embodiment Mode 2

In this embodiment mode, an example of a liquid crystal display deviceis described with reference to FIGS. 3A and 3B, in which a thin filmtransistor 320 using an amorphous silicon layer is placed in a pixelportion 394 and a signal line driver circuit 391 or a scan line drivercircuit 392 or 393 which drives the thin film transistor is formedinside a semiconductor substrate.

FIG. 3A shows a cross-sectional view of a liquid crystal display device,which performs display by application of voltage to a liquid crystallayer 306 between a pixel electrode 309 and a counter electrode 308.

First, a semiconductor substrate where a MOS transistor 305 is formed isprepared, and the semiconductor substrate where the MOS transistor 305is formed is bonded to a first substrate 311 by a separation method byhydrogen ion irradiation. A bonding layer 312 formed on the firstsubstrate 311 and a bonding layer 331 formed on the semiconductorsubstrate are bonded together. Note that the bonding layers 312 and 331may be formed using any of the inorganic insulating materials describedin Embodiment Mode 1. As the first substrate 311, a glass substrate isused.

A wiring layer 303 is a wiring layer which is connected to an FPC 390.Note that in order to electrically connect the MOS transistor to thewiring layer 303, the MOS transistor is polished by a CMP process untilthe surface of an electrode 304 of the MOS transistor is exposed afterthe bonding layer is formed.

Next, the semiconductor substrate is etched into a shape shown in FIG.3B.

After that, the polished surface of the semiconductor substrate and abonding layer 302 of a second substrate 301 are located in contact witheach other and thereby bonded together to electrically connect thewiring layer 303 to the electrode 304 of the MOS transistor 305. Notethat the bond is formed between the polished surface and the bondinglayer 302 of the second substrate 301, not between the wiring layer 303and the electrode 304. Note that the bonding layer 302 may be formedusing any of the inorganic insulating materials described in EmbodimentMode 1.

As the second substrate 301, a glass substrate is used, and the thinfilm transistor 320 using an amorphous silicon layer is formed by aknown method.

FIG. 3B is a top view of the liquid crystal display device. The pixelportion 394 is surrounded by a semiconductor member; the semiconductormember has an opening as shown in FIG. 3B; and this opening is a liquidcrystal inlet. After tire injection of a liquid crystal material iscompleted, sealing is performed using a sealant 370 of an organicmaterial.

In addition, the distance between the pair of substrates may be ensuredby a columnar spacer 307.

In this embodiment mode, the number of components is reduced byreduction of the usage of the sealant 370 of an organic material to asmall amount and by building of a driver circuit in a member for bondingthe pair of substrates.

This embodiment mode can be freely combined with Embodiment Mode 1.

Embodiment Mode 3

In this embodiment mode, an example is described in which alight-receiving element 427 provided over a semiconductor substrate issealed using a sealing substrate 411 having a light-transmittingproperty. FIG. 4A is a cross-sectional view, and FIG. 4B is a top view.

A semiconductor substrate 400 is provided with a driver circuit 442including a CMOS circuit 401, and the CMOS circuit 401 constitutes apart of an amplifier circuit for amplifying light that is received bythe light-receiving element 427. Note that an interlayer insulating filmfor the CMOS circuit 401 is formed as a bonding layer 432. Theinterlayer insulating film may have a stacked-layer structure as long asa layer in contact with a semiconductor member 414 functions as abonding layer.

The light-receiving element 427 has a photoelectric layer, whichincludes a p-type semiconductor layer 423, an n-type semiconductor layer425, an i-type (intrinsic) semiconductor layer 424 which is interposedbetween the p-type semiconductor layer 423 and the n-type semiconductorlayer 425, a first electrode 429, and a second electrode 426. As aphotoelectric element, not only this stacked-layer structure but also aSchottky diode, a PN diode, an avalanche diode, or the like can be used.

Tire second electrode 426 is electrically connected to a wiring layer402 through a lead wiring 428. The wiring layer 402 is electricallyconnected to a connection terminal 440.

The semiconductor substrate 400 having the light-receiving element ofthe above structure is prepared.

Then, stick semiconductor members 414 are bonded to the sealingsubstrate 411. The stick semiconductor members 414 are bonded to thesealing substrate 411 by use of a bonding layer 431 formed thereon. Thebonding layer 431 is a silicon oxide film formed by a CVD method or aplasma CVD method using a mixed gas of a TEOS gas and an oxygen gas.

Then, the bonding layer 432 of the semiconductor substrate 400 havingthe light-receiving element and the stick semiconductor members 414 arebonded together to bond the semiconductor substrate 400 and the sealingsubstrate 411 together. After this, a space between each sticksemiconductor member 414 is sealed using a sealant 441. Although anexample of performing hermetic sealing is given here, the sealant doesnot necessarily need to be provided. As shown in FIG. 4B, the pluralityof stick semiconductor members 414 is placed in a position where alight-receiving portion 451 in which the light-receiving elements 427are arranged in a matrix does not overlap with the driver circuit 442.Note that an insulating layer 430 for insulating adjacentlight-receiving elements from each other may be provided.

The stick semiconductor members 414 can maintain the distance to thesealing substrate 411 and prevent contamination of the light-receivingelement by an impurity. In addition, when pressure is applied from theoutside due to some cause, the stick semiconductor members 414 canprevent the pressure from being applied to the light-receiving elementand can distribute the pressure. In particular, when the light-receivingelement is mounted on a printed wiring board or the like, in some cases,a force of about 30 N is applied during pressure bonding. However, thestick semiconductor members 414 can prevent the semiconductor substrate400 and the sealing substrate 411 from breaking and can protect thelight-receiving element during mounting. When a semiconductor substrateprovided with a plurality of light-receiving elements and a sealingsubstrate that are bonded together are cut by a dicer or the like in astep of dividing the plurality of light-receiving elements into pieces,the light-receiving elements can also be protected.

Although an example of using a semiconductor substrate having alight-receiving element is given here, a light-receiving element may beformed over a glass substrate, and the glass substrate and another glasssubstrate may be fixed to each other using stick semiconductor members.In that case, after a semiconductor substrate having ahydrogen-containing layer is bonded to the other glass substrate, onepart of the semiconductor substrate is separated from the other, andthen, selective etching is performed to leave stick semiconductormembers remaining over the glass substrate. The glass substrate havingthe stick semiconductor members obtained in the above-mentioned mannermay be bonded to the glass substrate provided with the light-receivingelement. When a glass substrate that is fragile is used, the glasssubstrate can be prevented from breaking by making the sticksemiconductor members function as spacers.

This embodiment mode can be freely combined with Embodiment Mode 1 orEmbodiment Mode 2.

Embodiment Mode 4

In this embodiment mode (FIGS. 5A and 5B), an example is described inwhich a single-crystal semiconductor member 502 is formed in a positionwhere it does not overlap with the pixel portion 122 in the same step asformation of a single-crystal semiconductor layer 501 over a secondsubstrate 101 by a separation method by hydrogen ion irradiation or thelike in order to adjust the distance between the substrates. In FIGS. 5Aand 5B, portions in common with those in FIG. 1D are denoted by the samereference numerals.

The frame 114 is bonded so as to overlap with the single-crystalsemiconductor member 502. Note that, as shown in FIG. 5B, the frame 114has an opening, which is sealed using a sealant 505. A bonding layer 504for bonding the second substrate 101 and the frame together is aninterlayer insulating film for the thin film transistor 120. A wiringlayer 503 is formed in the same step as formation of a gate electrode ofthe thin film transistor 120 and is electrically connected to an FPC529.

A signal line driver circuit 520 and a scan line driver circuit 521 areprovided around the pixel portion 122, and the frame 114 is bonded so asto surround these.

This embodiment mode can be freely combined with any of Embodiment Modes1 to 3.

Embodiment Mode 5

In this embodiment mode, an example of a semiconductor device having anantenna is described with reference to FIG. 6. The semiconductor deviceshown in FIG. 6 is also called a wireless chip. For a wireless chip, notonly a light-transmitting substrate but also paper or a colored filtercan be used.

FIG. 6 is a top view showing a structure in which an antenna 621 issurrounded by stick semiconductor members 614 and a space between eachof them is sealed using a sealant 605. The antenna 621 and an integratedcircuit 620 are formed over a second substrate 601. The second substrate601 is a glass substrate. In addition, a first substrate 602 serving asa sealing substrate is also a glass substrate.

In the case where the antenna is formed by plating or the like, althoughit depends on the antenna material, when a material which is likely toreact with oxygen or the like to deteriorate or a material which reactswith oxygen to increase its electric resistance is used, the antenna ispreferably sealed in a hermetic space surrounded by the pair ofsubstrates and the semiconductor members 614 as shown in FIG. 6.

The antenna 621 is electrically connected to the integrated circuit 620.The integrated circuit 620 has at least a power supply circuit whichgenerates various kinds of power to be supplied to circuits in thesemiconductor device based on an AC signal which is input from theantenna 621.

The shape of the antenna 621 is not limited to that shown in FIG. 6. Asa signal transmission method used for the antenna, an electromagneticcoupling method, an electromagnetic induction method, a microwavemethod, or the like can be used. The transmission method may beappropriately selected by a practitioner in consideration of theapplication, and an antenna having a length and a shape that are mostsuitable for the selected transmission method may be provided.

In the case of employing, for example, an electromagnetic couplingmethod or an electromagnetic induction method (for example, a 13.56 MHzband) as the transmission method, electromagnetic induction caused by achange in magnetic field density is used. Thus, a conductive film whichfunctions as an antenna is formed into an annular shape (for example, aloop antenna) or a spiral shape (for example, a spiral antenna).

In the case of employing, for example, a microwave method (for example,a UHF band (860 to 960 MHz band) or a 2.45 GHz band) as the transmissionmethod, the length and shape of a conductive film which functions as anantenna may be appropriately set in consideration of the wavelength ofan electric wave used for signal transmission. The conductive film whichfunctions as an antenna can be formed into, for example, a linear shape(for example, a dipole antenna), a flat shape (for example, a patchantenna), or the like. The shape of the conductive film which functionsas an antenna is not limited to a linear shape and may be a curvedshape, a meandering shape, or a combination thereof in consideration ofthe wavelength of an electromagnetic wave.

Because a glass substrate is a substrate that does not block a wirelesssignal, the antenna can also transmit and receive electric waves invarious directions besides a plane where the antenna is formed.

In addition, it is preferable that a glass substrate and a semiconductormember that have a small difference in thermal expansion coefficientwith respect to each other be used to increase reliability of asemiconductor device. This is because, if there is a large difference inthermal expansion coefficient between them and the semiconductor deviceis placed in an environment at high temperature or low temperature, theadhesion between the pair of substrates may be decreased.

The stick semiconductor members 614 can maintain the distance betweenthe first substrate 602 and the second substrate 601 and can preventcontamination of the integrated circuit and the antenna by an impurity.By placement of a single-crystal semiconductor member around theintegrated circuit, an impurity from the outside is made to intrudepreferentially into the single-crystal semiconductor member and to beretained in the single-crystal semiconductor member; accordingly, theintrusion of an impurity into a semiconductor layer of the integratedcircuit is prevented. By prevention of the intrusion of an impurity intothe semiconductor layer of the integrated circuit, long-term reliabilityis improved. In addition, when pressure is applied from the outside dueto some cause, the plurality of stick semiconductor members 614 candecrease the pressure that is applied to the integrated circuit and theantenna and can distribute the pressure. When high impact is applied dueto pressure from the outside, the semiconductor members 614 may bedestroyed before the integrated circuit is destroyed. However, becausethe impact is concentrated on the semiconductor members 614, thepressure is distributed and the semiconductor device can function as awireless chip even after the impact is applied unless the integratedcircuit is damaged. Note that there is no problem even if thesemiconductor members 614 are destroyed because no electrode, wiring,element, or the like is provided inside or on the surface of thesemiconductor members 614.

The position alignment of the integrated circuit and the sticksemiconductor members 614 with each other is important. This is because,if any of the stick semiconductor members and the integrated circuitoverlap with each other, pressure from the outside may be applied to theintegrated circuit through the stick semiconductor member and theintegrated circuit may be destroyed.

Although FIG. 6 shows an example in which glass substrates are used asthe pair of substrates, films can alternatively be used. FIGS. 8A and 8Bshow an example in which films are used as a first substrate 802 and asecond substrate 801.

FIG. 8A is a top view, and FIG. 8B is a cross-sectional view taken alonga chain line A-B of FIG. 8A.

Over the second substrate 801, an integrated circuit 820 and aninsulating film 803 are formed, and an antenna 821 is electricallyconnected to the integrated circuit 820. Because a connecting portionbetween the antenna 821 and the integrated circuit 820 is sensitive topressure from the outside or to film bending, the connecting portion isreinforced by placement of stick semiconductor members 814 therearound.In addition, because a wireless chip is attached to a curved surface insome cases, a portion 810 which is designed to be bendable (portionindicated by a dotted line in FIG. 8A) is provided in a space betweeneach of the plurality of semiconductor members. Accordingly, thewireless chip shown in FIG. 8A is bent preferentially in the portionindicated by the dotted line, and the degree of bending of theintegrated circuit can be reduced. The antenna may also be disconnecteddue to bending; however, as shown in FIG. 8A the shape and placement ofthe antenna are designed so that the antenna is not easily disconnectedeven if the antenna is bent in the portion indicated by the dotted line.

In particular, when films are used, a manufacturing apparatus using aroller is often used, and there is a process in which films aresandwiched between two rollers during pressure bonding. Alternatively,paper can be used. When a flexible film or paper is used, sticksemiconductor members serve as skeletal members. Therefore, if pressureis applied from the outside, the degree of bending of the film or papercan be reduced. As a result, the integrated circuit can be preventedfrom being destroyed.

Although FIGS. 8A and 8B show an example in which no sealant is used,air adhesive synthetic film may be used as the first substrate 802.After the integrated circuit, the antenna, and the stick semiconductormembers are formed over the second substrate, sealing may be preformedby pressure bonding of the first substrate 802 that is an adhesivesynthetic film with rollers. In this case, because pressure from therollers is concentrated on the stick semiconductor members, theintegrated circuit and the antenna can be protected.

This embodiment mode can be freely combined with any of Embodiment Modes1 to 4.

Embodiment Mode 6

Various electronic devices can be manufactured by building ofsemiconductor elements sealed according to the present inventiontherein. Examples of electronic devices include cameras such as videocameras and digital cameras, goggle-type displays (head-mounteddisplays), projectors, navigation systems, sound reproducing devices(such as car audio systems and audio components), notebook personalcomputers, game machines, portable information terminals (such as mobilecomputers, cellular phones, portable game machines, and electronicbooks), image reproducing devices each provided with a recording medium(specifically, devices including a display which can reproduce arecording medium such as a digital versatile disc (DVD) and can displayan image thereof), and the like.

An example is given in which an optical sensor including thelight-receiving element described in Embodiment Mode 3 is built in aninformation terminal device typified by a cellular phone or a PDA. Inaddition, an example is given in which the light-emitting elementdescribed in Embodiment Mode 1 or the liquid crystal element describedin Embodiment Mode 2 is build in a display portion as a display element.

In these years, the amount of power consumed by a lighting device suchas a backlight tends to increase because of color display or an increasein quality of moving images of an information device such as a cellularphone or a PDA. On the other hand, a reduction in power consumption hasbeen demanded without deterioration of display quality. Consequently,the amount of power consumption is reduced by control of the luminanceof a display device or by control of lighting of a key switch by meansof sensing of the illuminance in an environment where an informationdevice is used.

FIG. 7A shows a cellular phone, which has a main body 2001, a chassis2002, a display portion 2003, an operation key 2004, an audio outputportion 2005, an audio input portion 2006, optical sensor portions 2007and 2008, and the like. The present invention can be applied to thedisplay portion 2003 or the optical sensor portions 2007 and 2008. Bycontrol of the luminance of the display portion 2003 based on theilluminance obtained by the optical sensor portion 2007 or by control oflighting of the key switch 2004 based on the illuminance obtained by theoptical sensor portion 2008, the amount of power consumed by thecellular phone can be reduced.

In an image-taking device such as a digital camera or a digital videocamera, a visible light detection sensor is provided in the vicinity ofan eyepiece portion (viewfinder) of an optical viewfinder to detectwhether or not a person taking a picture looks through the opticalviewfinder. For example, the detection is preformed utilizing the factthat when the face of a person taking a picture approaches theviewfinder eyepiece portion, the eyepiece portion and its vicinity arein the shadow of the person taking a picture and the amount of lightreceived by the sensor changes.

FIG. 7B shows a digital camera, which has a main body 2101, a displayportion 2102, an image receiving portion 2103, an operation key 2104, anexternal connection port 2105, a shutter button 2106, a viewfinder 2107,an optical sensor portion 2108, and the like. The present invention canbe applied to the display portion 2102 or the optical sensor portion2108. Whether or not a person taking a picture looks through an opticalviewfinder is detected based on a change in the amount of light receivedby a sensor in the optical sensor portion 2108 which is provided in tirevicinity of the viewfinder 2107. The amount of power consumption can bereduced by turning off the display portion 2102 when a person taking apicture looks through the optical viewfinder.

In addition, an optical sensor element can be used for the purpose ofadjustment of projector convergence.

A television device can be completed with a semiconductor deviceincluding a display element which has a sealing structure enhanced bythe present invention. An example of a television device intended tohave high performance and high reliability is described with referenceto FIG. 7C.

By building of a display module in a chassis, a television device can becompleted. A display panel in which components up to an FPC are providedas shown in FIG. 5B is generally also called an EL display module. Whenan EL display module as shown in FIG. 5B is used, an EL televisiondevice can be completed, and when a liquid crystal display module asshown in FIG. 3B is used, a liquid crystal television device can becompleted. Using a display module, a main screen 2203 can be formed, andother accessories such as speaker portions 2209 and operation switchesare provided. In this manner, a television device can be completedaccording to the present invention.

As shown in FIG. 7C, a display panel 2202 using a display element isbuilt in a chassis 2201. In addition to reception of general TVbroadcast with the use of a receiver 2205, communication of informationcan also be performed in one way (from a transmitter to a receiver) orin two ways (between a transmitter and a receiver or between receivers)by connection to a wired or wireless communication network through amodem 2204. The television device can be operated with switches built inthe chassis or with a remote control device 2206 separated from the mainbody. This remote control device may also be provided with a displayportion 2207 that displays information to be output. In addition, thereceiver 2205 may be provided with the wireless chip described inEmbodiment Mode 5. By building of the wireless chip in the receiver2205, the manufacturing date can be recognized accurately. In addition,by building of the wireless chip in the receiver 2205, it is alsopossible to determine, using a wireless signal, which area a product inwhich the receiver 2205 is built in is located in. In addition, bybuilding of a wireless chip in the receiver 2205, the television devicemay be operated using a wireless signal for a signal from the remotecontrol device 2206.

In addition, for the television device, a structure for displaying achannel, sound volume, or the like may be additionally provided byformation of a sub-screen 2208 with a second display panel in additionto the main screen 2203. In this structure, the main screen 2203 may beformed using an EL display panel which has excellent viewing angle, andthe sub-screen 2208 may be formed using a liquid crystal display panelwhich can perform display while consuming less power. In order toprioritize a reduction in power consumption, a structure in which themain screen 2203 is formed using a liquid crystal display panel, thesub-screen 2208 is formed using an EL display panel, and the sub-screencan be turned on and off may be employed.

According to the present invention, a semiconductor device having adisplay function with high performance and high reliability can bemanufactured. Accordingly, a high-performance, high-reliabilitytelevision device can be manufactured.

This embodiment mode can be freely combined with any of Embodiment Modes1 to 5.

This application is based on Japanese Patent Application serial No.2007-133554 filed in Japan Patent Office on May 18, 2007, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a first glasssubstrate; a second glass substrate; a semiconductor element over thefirst glass substrate; a member comprising silicon between the firstglass substrate and the second glass substrate; a first bonding layercomprising a first silicon oxide film, and provided between the memberand the first glass substrate; a second bonding layer comprising asecond silicon oxide film, and provided between the member and thesecond glass substrate; a light emitting element over the semiconductorelement; and a sealant over the first glass substrate, wherein thesemiconductor element is sealed using the first glass substrate, thesecond glass substrate, and the member, wherein the semiconductorelement faces a first surface of the member, wherein a second surface ofthe member is in direct contact with the sealant, wherein a distancebetween the first glass substrate and the second glass substrate ismaintained by the member, wherein the semiconductor element comprises athin film transistor, wherein the first bonding layer is configured toserve as a gate insulating layer of the thin film transistor, andwherein the first glass substrate and the second glass substrate havethe same thermal expansion coefficient.
 2. The semiconductor deviceaccording to claim 1, wherein an upper surface of the member has a frameshape, and the semiconductor element is sealed in a space surrounded bythe member, the first glass substrate, and the second glass substrate.3. The semiconductor device according to claim 1, wherein the member isa single-crystal silicon member.
 4. A semiconductor device comprising: afirst glass substrate; a second glass substrate; a semiconductor elementover the first glass substrate; a plurality of members comprisingsilicon between the first glass substrate and the second glasssubstrate; a first bonding layer comprising a first silicon oxide film,and provided between the plurality of members and the first glasssubstrate; a second bonding layer comprising a second silicon oxidefilm, and provided between the plurality of members and the second glasssubstrate; a light emitting element over the semiconductor element; anda sealant over the first glass substrate, wherein the semiconductorelement is sealed using the first glass substrate, the second glasssubstrate, and the plurality of members, wherein the semiconductorelement faces a first surface of each of the plurality of members,wherein a second surface of each of the plurality of members is indirect contact with the sealant, wherein a distance between the firstglass substrate and the second glass substrate is maintained by theplurality of members, wherein the semiconductor element comprises a thinfilm transistor, wherein the first bonding layer is configured to serveas a gate insulating layer of the thin film transistor, and wherein thefirst glass substrate and the second glass substrate have the samethermal expansion coefficient.
 5. A semiconductor device comprising: afirst glass substrate; a second glass substrate; a semiconductor circuitover the first glass substrate; a plurality of members comprisingsilicon between the first glass substrate and the second glasssubstrate; a first bonding layer comprising a first silicon oxide film,and provided between the plurality of members and the first glasssubstrate; a second bonding layer comprising a second silicon oxidefilm, and provided between the plurality of members and the second glasssubstrate; and a sealant over the first glass substrate, wherein thesemiconductor circuit faces a first surface of each of the plurality ofmembers, wherein a second surface of each of the plurality of members isin direct contact with the sealant, wherein the semiconductor circuitcomprises a thin film transistor, wherein the first bonding layer isconfigured to serve as a gate insulating layer of the thin filmtransistor, and wherein the first glass substrate and the second glasssubstrate have the same thermal expansion coefficient.
 6. Thesemiconductor device according to claim 5, further comprising an antennaelectrically connected to the semiconductor circuit over the first glasssubstrate.
 7. The semiconductor device according to claim 5, wherein adistance between the first glass substrate and the second glasssubstrate is maintained by the plurality of members.
 8. A semiconductordevice comprising: a first glass substrate; a semiconductor element overthe first glass substrate; a second glass substrate over thesemiconductor element; a member comprising silicon between the firstglass substrate and the second glass substrate; a first bonding layercomprising a first silicon oxide film, and provided between the memberand the first glass substrate; a second bonding layer comprising asecond silicon oxide film, and provided between the member and thesecond glass substrate; a light emitting element over the semiconductorelement; and a sealant over the first glass substrate, wherein thesemiconductor element is hermetically sealed by the first glasssubstrate, the second glass substrate and the member, wherein thesemiconductor element faces a first surface of the member, wherein asecond surface of the member is in direct contact with the sealant,wherein the semiconductor element comprises a thin film transistor,wherein the first bonding layer is configured to serve as a gateinsulating layer of the thin film transistor, and wherein the firstglass substrate and the second glass substrate have the same thermalexpansion coefficient.
 9. The semiconductor device according to claim 8wherein a distance between the first glass substrate and the secondglass substrate is maintained by the member.